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DG304B/306B/307B
Vishay Siliconix
CMOS Analog Switches
FEATURES
D D D D D D "15-V Input Range Fast Switching--tON: 110 ns Low rDS(on): 30 W Single Supply Operation CMOS Logic Levels Micropower: 30 nW
BENEFITS
D D D D
APPLICATIONS
Full Rail-to-Rail Analog Signal Range D Low Level Switching Circuits Low Signal Error D Programmable Gain Amplifiers Wide Dynamic Range D Portable and Battery Powered Systems Low Power Dissipation
DESCRIPTION
The DG304B, DG306B and DG307B monolithic CMOS switches were designed for applications in communications, instrumentation and process control. This series is well suited for applications requiring fast switching and nearly flat on-resistance over the entire analog range. Designed on the Vishay Siliconix PLUS-40 CMOS process to achieve low power consumption and excellent on/off switch performance, these switches are ideal for battery powered applications, without sacrificing switching speed. Break-before-make switching action is guaranteed, and an epitaxial layer prevents latchup. Single supply operation (for positive switch voltages) is allowed by connecting the V- rail to 0 V. Each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. These switches are CMOS input compatible.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG304B
NC D1 NC S1 NC IN1 GND 1 2 3 4 5 6 7 Top View Plastic DIP 14 13 12 11 10 9 8 V+ D2 NC S2 NC IN2 V-
TRUTH TABLE
Logic
0 1 Logic "0" v 3.5 V Logic "1" w 11 V
Switch
OFF ON
DG306B
NC S3 D3 D1 S1 IN1 GND 1 2 3 4 5 6 7
Plastic DIP 14 13 12 11 10 9 Top View 8 V+ S4 D4 D2 S2 IN2 V-
TRUTH TABLE
Logic
0 1 Logic "0" v 3.5 V Logic "1" w 11 V
Switch
OFF ON
Document Number: 71403 S-02968--Rev. A, 22-Jan-01
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DG304B/306B/307B
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG306B
NC S3 D3 D1 S1 IN1 GND Plastic DIP
1 2 3 4 5 6 7 Top View
14 13 12 11 10 9 8
V+ S4 D4 D2 S2 IN2 V-
Four SPST Switches per Package
TRUTH TABLE
Logic
0 1
SW1, SW2 SW3, SW4
OFF ON Logic "0" v 3.5 V Logic "1" w 11 V ON OFF
ORDERING INFORMATION
Temp Range DG304B
-40 to 85_C 14-Pin Plastic DIP DG304BDJ
Package
Part Number
DG306B
-40 to 85_C 14-Pin Plastic DIP DG306BDJ
DG307B
-40 to 85_C 14-Pin Plastic DIP DG307BDJ
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Power Dissipationb 14-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 11 mW/_C above 75_C
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Document Number: 71403 S-02968--Rev. A, 22-Jan-01
DG304B/306B/307B
Vishay Siliconix
SPECIFICATIONSa
Limits Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) IS(off) ID(off) ID(on) VD = "10 V, IS = 10 mA VS = "14 V VD = #14 V VS = "14 V VD = #14 V VD = VS = "14 V Full Room Full Room Full Room Full Room Full -5 -100 -5 -100 -5 -200 -15 30 "0.1 "0.1 "0.1 15 50 75 5 100 5 100 5 200 nA V W -40 to 85_C
Symbol
V+ = 15 V, V- = -15 V VIN = 3.5 V or 11 Vf
Tempb Mind
Typc
Maxd
Unit
Digital Control
Input Current with Input Voltage High Input Current with Input Voltage Low VIN = 5 V IINH VIN = 15 V IINL VIN = 0 V Room Full Room Full Room Full -1 -1 -0.001 0.001 -0.001 1 mA
Dynamic Characteristics
Turn-On Time Turn-Off Time Break-Before-Make Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel-On Capacitance Input Capacitance Off-Isolation Crosstalk (Channel-to-Channel) tON tOFF tOPEN Q CS(off) CD(off) CD(on) CIN OIRR XTALK f = 1 MHz VIN = 0 V VIN = 15 V VIN = 0 V, RL = 1 kW VS = 1 Vrms, f = 500 kHz f = 1 MHz, VS = 0 V VS, VD = 0 V Room See Figure 2 DG305A/307A ONLY, See Figure 3 CL = 1 nF, Rgen = 0, Vgen = 0 V, See Figure 4 Room Room Room Room Room Room Room Room Room Room 110 70 50 30 14 14 40 6 7 62 74 dB pF pC ns
Power Supplies
Positive Supply Current Negative Supply Current I+ I- VIN = 15 V or 0 V (All Inputs) Room Full Room Full -100 0.001 -0.001 100 mA m
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Document Number: 71403 S-02968--Rev. A, 22-Jan-01
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DG304B/306B/307B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and " Power Supply
100 r DS(on) Drain-Source On-Resistance ( W ) - TA = 25_C 80 "5 V 60 "7.5 V 40 "10 V "15 V 20 "20 V r DS(on) Drain-Source On-Resistance ( W ) - 100 +7.5 V 80 +10 V 60 +15 V 40 +20 V TA = 25_C V- = 0 V
rDS(on) vs. VD and + Power Supply Voltage
20
0 -20 -15 -10 -5 0 5 10 15 20 VD - Drain Voltage (V)
0 0 5 10 VD - Drain Voltage (V) 15 20
Leakage Currents vs. Analog Voltage
10 10 9 0 ID(off) or IS(off) 8 7 -10 I S, I D (pA) ID(on) V T (V) 6 5 4 3 -30 2 -40 -15 -12 -9 -6 -3 0 3 6 9 12 15 1 0 VD or VS - Drain or Source Voltage (V)
Input Switching Threshold vs. V+ and V- Supply Voltages
TA = 25_C
-20
0
"5
"10
"15
"20
V+, V- Positive & Negative Supplies (V)
Switching Time vs. Positive Supply Voltage
240 V- = -15 V TA = 25_C VINH = 15 V VINL = 0 V t ON , t OFF (ns) tON 160 240
Switching Time vs. Negative Supply Voltage
V+ = 15 V TA = 25_C VINH = 15 V VINL = 0 V
200
200
t ON , t OFF (ns)
160 tON 120
120 tOFF 80
80
tOFF
40 0 5 10 15 V+ - Positive Supply Voltage (V)
40 0 -5 -10 -15 V- - Negative Supply Voltage (V)
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Document Number: 71403 S-02968--Rev. A, 22-Jan-01
DG304B/306B/307B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Supply Currents vs. Toggle Frequency
8 V+ = 15 V RL = R CL = 0 VS = Open
6 I+, I- (mA)
4
2
0 1k 10 k 100 k 1M f - Frequency (Hz)
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V- VIN Level Shift/ Drive V+ GND D
V-
FIGURE 1.
TEST CIRCUITS
+15 V Logic "1" = Switch On V+ VS = 3 V S D VO 0V IN 15 V GND V- RL 300 W CL 33 pF VS 90% 10% 0V -15 V CL (includes fixture and stray capacitance) VO = VS RL RL + rDS(on) Switch Output tON tOFF Logic Input
VINH
50%
FIGURE 2. Switching Time
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Document Number: 71403 S-02968--Rev. A, 22-Jan-01
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DG304B/306B/307B
Vishay Siliconix
TEST CIRCUITS
+15 V Logic Input D1 D2 VO2 VO1 Switch Output RL1 300 W RL2 300 W CL2 33 pF CL1 33 pF 0V VS1 VO1 0V VS2 Switch Output VO2 50% 0V tBBM 50% Logic "1" = Switch On VINH 50%
V+ VS1 = 3 V VS2 = 3 V S1 S2 IN GND V-
-15 V CL (includes fixture and stray capacitance)
FIGURE 3. Break-Before-Make SPDT (DG307B)
+15 V
Rg
V+ S IN D CL 1 nF V- VO VO
DVO
Vg 3V
INX ON Q = DVO x CL OFF ON
GND
-15 V
FIGURE 4. Charge Injection
APPLICATION HINTSa
V+ Positive Supply Voltage (V)
15 20 15
V- Negative Supply Voltage (V)
-15 -20 0
GND Voltage (V)
0 0 0
VIN Logic Input Voltage VINH(min)/VINL(max) (V)
11/3.5 11/3.5 11/3.5
VS or VD Analog Voltage Range (V)
-15 to 15 -20 to 20 0 to 15
Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. www.vishay.com Document Number: 71403 S-02968--Rev. A, 22-Jan-01
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DG304B/306B/307B
Vishay Siliconix
APPLICATIONS
+15 V 10 kW VIN 10 kW VOUT -15 V
+15 V 10 kW 100 kW
-15 V
10 kW
1 MW
A1
A0
Binary Input 11 10 01 00
Gain 1 10 100 1000
DG304B
FIGURE 5. Low Power Binary to 10n Gain Low Frequency Amplifier
+15 V
-15 V
-15 V
+15 V
VIN1 VOUT VIN2
CMOS Logic Input Select High = VIN1 -15 V +15 V
CMOS Logic Gain Select High = 10x 10x 1x
DG307B
GND
20 kW
180 kW
FIGURE 6. Low Power Non-Inverting Amplifier with Digitally Selectable Inputs and Gain
Document Number: 71403 S-02968--Rev. A, 22-Jan-01
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